Wolfspeed - MEVds

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Content
About Wolfspeed
Why Wolfspeed?
Why SiC?
Why Wolfspeed SiC?
Upcoming Products
New Products

WolfPACK™ Modules
New 1200V MOSFETs
New E-Series Automotive Qualified Diodes
CRD-22DD12N
650V MOSFETs
KIT-CRD-8FF65P
62mm (BM2 & BM3) SiC Half-Bridge Power Modules
6^TH Generation (C6D) 650V SiC Schottky Diodes
C3M0160120D
C3M0160120J
C3M0350120D
C3M0350120J
C3D16065D1
E4D10120A
XM3 High Density Power Module

Portfolio Overview
Products

MOSFETs
Diodes (Discrete)

600 & 650V
1200V
1700V

Diodes (Bare Die)

600 & 650V
1200V
1700V

Modules
Gate Driver Boards

Automotive Products

E-Series MOSFETs
E-Series Diodes

Applications

Fast Charger for Electric Vehicles
High Efficiency Power for Data Centers
Inverters for Solar Power and Energy Storage
Low Power Auxiliary SMPS
AC to DC Converters
DC to DC Converters

Reference Designs & Eval Kits

About Wolfspeed

Location: USA, North Carolina
Certifications:ISO9001, ISO14001; AECQ100 Automotive for 900V MOSFETs April 2018

Wolfspeed (a CREE company) is the world’s leading manufacturer of silicon-carbide Schottky diodes, MOSFETs and Modules for efficient power conversion.
These devices provide increased efficiency, higher switching frequency and reduced system size and weight
Variety of applications,including power supplies and solar inverters.

Why Wolfspeed?

#1 market share in SiC MOSFETs and Diodes
Most experienced in SiC, 30 years of innovation
Wolfspeed is the market leader in terms of portfolio and innovation
Unique vertical integration, from crystals growth to SiC products supply
C3M SiC MOSFET Technology enable higher efficiency, more compact and lighter designs
Best switching performances in the industry
Easy to use, beneficial in hard switching as well as in soft switching
6+ trillion hours in the field, proven reliability, extensive reliability data
Largest production capacity
Ramping production, improving yields, reducing lead-times and costs

Why SiC?

Silicon Carbide vs. Silicon:

Higher power conversion capability
Faster switching speeds
Improved thermal performance
Higher efficiency
Higher reliability
Any power supply design from 600V and up hat the potential to benefit from switching to SiC

Cost reduction example:

Why Wolfspeed SiC?

Wolfspeed SiC Power Product Range:

MOSFETs (Discrete and Bare Die)

900V to 1700V (650V coming Q4 19)
Up to 100A current rating (package limited)
Up to 196A current rating (Bare Die)

Schottky Diodes (Discrete and Bare Die)

600V to 1700V
Up to 100A current rating (package limited)
Up to 196A current rating (Bare Die)

Power Modules

Up to 1700V rating
Up to 450A current rating
Half-bridge and three-phase configurations

Wolfspeed invented the SiC MOSFET in 2011
30+ years of SiC power with 6+ trillion installed field hours
Wolfspeed is Investing for the Future
#1 market share in SiC technology
17+ Years of Diode and MOSFET Production
Thousands of customers with millions of MOSFETs and diodes
Focused Development and Customer Support
ALL resources dedicated to developing SiC capacity, devices, packages, and to providing superior applications support:

The Only Vertically-Integrated SiC Manufacturer:

Production capability plans:
Preparing the future requirements

Upcoming Products

Product	State	Type
650V Dioden QFN 8x8	Upcoming	Diode
1200V MOSFET 32, 160, 350 mOhm	Upcoming	MOSFET
1200V Modules 360, 400A	Upcoming	Module
1200V Reference Design 250kW	Upcoming	Reference Design

New Products

WolfPACK™ modules

Products	Specifications	Features	Benefits	Applications
CAB011M12FM3	V_DS: 1200V R_DS(ON): 11mΩ Half-Bridge Module	Ultra-Low Loss High Frequency Operation Zero Turn-Off Tail Current from MOSFET Normally-Off, Fail-Safe Device Operation	Enables Compact, Lightweight Systems Increased System Efficiency, due to Low Switching & Conduction Losses of SiC Reduced Thermal Requirements and System Cost	EV Chargers Solar High-Efficiency Converters / Inverters Motor & Traction Drives Smart-Grid / Grid-Tied Distributed Generation	Product Brief Presentation
CAB016M12FM3	V_DS: 1200V R_DS(ON): 16mΩ Half-Bridge Module
CCB021M12FM3	V_DS: 1200V R_DS(ON): 21mΩ Six-Pack Module
CCB032M12FM3	V_DS: 1200V R_DS(ON): 32mΩ Six-Pack Module

1200V MOSFETs

Products	Features	Benefits	Applications
C3M0040120K	3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant	Reduce switching losses and minimize gate ringing Higher system efficiency Reduce cooling requirements Increase power density Increase system switching frequency	Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch
C3M0040120D	3rd generation SiC MOSFET technology High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant		Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies
C3M0032120J1	3rd generation SiC MOSFET technology Optimized package with separate driver source pin 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant		Solar inverters EV motor drive High voltage DC/DC converters Switched mode power supplies Load switch

New E-Series Automotive Qualified Diodes

Product	Features	Benefits	Applications
E3D08065G	650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF	Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway	Automotive and Traction Power Conversion Battery Charging Systems Boost Diode in PFC or DC/DC Stages Free Wheeling Diodes in Inverter Stages AC/DC Converters PV Inverters
E3D30065D
E3D20065D

CRD-22DD12N

Picture	Specifications		Applications	Datasheet
Picture	Charging Mode	Discharging Mode	Applications	Datasheet
	Input Voltage: 380V-900VDC Output Voltage: 480V-800VDC Nominal. System capable of 200V-800VDC At Vin=650V-900VDC, Output Power: 22kW, Output current: 36A At Vin=380V-900VDC, Output Power: 6.6kW, Output current: 26.4A	Input Voltage : 300V-800VDC Output Voltage : 360V-750VDC Nominal At Vin=300V- 800VDC , Output Power : 6.6W , Output current : 19A	EV On-Board Charger EV fast Charging

650V MOSFETs

Product	Features / Benefits	Figures of Merit	Applications	Links
C3M0015065D	Features: 3^rd Generation (C3MTM) SiC MOSFET Technologie Superior overall system level efficiency High frequency operation Robust body diode with low reverse recovery charge Kelvin Source connection to reduce parasitic inductance and switching losses Industry standard packages that meet creepage and clearance requirements Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Easy to parallel and simple to drive Enable new hard switching PFC topologies (Totem-Pole)	Low on-state resistance over temperature (Rds(on) @ 175°C = 80 mΩ for 60 mΩ Device) Low parasitic capacitances (Coss = 80 pF for 60 mΩ Device) Robust and fast body diode with ultra-low Qrr (Qrr = 62 nC for 60 mΩ Device) Wide range of operation junction temperature (-40°C to 175°C)	Server Power Supplies EV Charging Systems Energy Storage Systems (UPS) Solar (PV) Inverters Industrial Power Supplies Battery Management Systems	Datasheets Presentations MOSFETs Overview 650V MOSFETs
C3M0015065K
C3M0060065D
C3M0060065K
C3M0060065J
C3M0025065D
C3M0025065K
C3M0045065D
C3M0045065K
C3M0120065D
C3M0120065K
C3M0120065J

KIT-CRD-8FF65P

Picture	Specifications	Applications	Design	Links
	This evaluation board demonstrates the switching and thermal performance of 650V SiC C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L) configured in a half bridge topology. The board is designed for characterizing E_ON and E_OFF losses and steady state thermal performance in SiC MOSFETs. The PCB contains AlN inserts under the MOSFETs to provide electrical isolation and optimized heat transfer to the heat sink.	Max DC Bus Voltage of 450V Max Power of 4.2kW @ 100kHz Optimized locations for scope probe measurements of drain current, VGS, and Vds Predrilled thermocouple locations in the heat sink under the MOSFET Synchronous and asynchronous buck and boost topologies supported Kit includes two SMA and BNC adapters for measuring VGS waveforms Includes heatsink, fan, fan guard, and thermal pads Can be configured as full bridge DC/DC by using two evaluation boards	Industrial Power Supplies Server/Telecom EV-Charging Systems Energy Storage Systems (ESS) Uninterruptible Power Supplies (UPS)	Presentation Test Report

62mm (BM2 & BM3) SiC Half-Bridge Power Modules

Products	Picture	Specifications	Features	Applications	Benefits	Links
WAB300M12BM3		Blocking Voltage: 1200V Current Rating: 300A R_DS(on) @ 25°C: 4mΩ Generation: Gen 3 MOS Max. junc. Temp.: 175°C Size: 105x62x31mm	High Humidity Operation THB-80 (HV-H3TRB) Implements Conduction Optimized Third Generation SiC MOSFET Technology Low Inductance (10.2 nH) Design Silicon Nitride Insulator and Copper Baseplate	Railway & Traction Solar EV Chargers Industrial Automation & Testing	Fast Time-to-Market with Minimal Development Required for Transition from 62mm Si IGBT Packages Increased System Efficiency due to Low Switching & Conduction Losses of SiC High Reliability Material Selection
WAB400M12BM3		Blocking Voltage: 1200V Current Rating: 400A R_DS(on) @ 25°C: 3,25mΩ Generation: Gen 3 MOS Max. junc. Temp.: 175°C Size: 105x62x31mm

6^TH Generation (C6D) 650V SiC Schottky Diodes

Products	Picture/Package	I_F @T_C=155°C)	V_RRM	Q_c	Features	Benefits	Applications	Links
C6D04065E	E-Package	4A	650V	16nC	New 6th Generation Technology Low Forward Voltage Drop (VF) Zero Reverse Recovery Current Zero Forward Recovery Voltage Low Leakage Current (Ir) Temperature-Independent Switching Behavior Positive Temperature Coefficient on V_F	Higher System Level Efficiency Increase System Power Density Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway	Switch Mode Power Supplies (SMPS) Server/Telecom Power Supplies Industrial Power Supplies Solar UPS	C6D04065E C6D06065E C6D08065E C6D10065E C6D16065D C6D20065D
C6D06065E		6A	650V	23nC
C6D08065E		8A	650V	29nC
C6D10065E		10A	650V	34nC
C6D16065D	D-Package	16A	650V	29nC			Switch Mode Power Supplies (SMPS) Battery Charging Systems Industrial Power Supplies Server/Telecom Power Supplies Solar
C6D20065D	D-Package	20A	650V	35nC

C3M0160120D

Solar inverters
EV motor drive
High voltage DC/DC converters
Switched mode power supplies
Load switch

Picture	MOSFET Type	Blocking Voltage	V_GSmax	I_Drain	Package	R_DS(on)	Datasheet
	SiC	1200V	-8/+19	115A @ 25°C	TO247-3	160mΩ

C3M0160120J

Renewable energy
High voltage DC/DC converters
Switch Mode Power Supplies
UPS

Picture	MOSFET Type	Blocking Voltage	V_GSmax	I_Drain	Package	R_DS(on)	Datasheet
	SiC	1200V	-8/+19	17A @ 25°C	TO263-7	160 mΩ

C3M0350120D

Renewable energy
High voltage DC/DC converters
Switch Mode Power Supplies
UPS

Picture	MOSFET Type	Blocking Voltage	V_GSmax	I_Drain	Package	R_DS(on)	Datasheet
	SiC	1200V	-8/+19	7,6A @ 25°C	TO247-3	350mΩ

C3M0350120J

Renewable energy
High voltage DC/DC converters
Switch Mode Power Supplies
UPS

Picture	MOSFET Type	Blocking Voltage	V_GSmax	I_Drain	Package	R_DS(on)	Datasheet
	SiC	1200V	-8/+19	7,2A @ 25°C	TO263-7	350mΩ

C3D16065D1

Switch Mode Power Supplies (SMPS)
Boost Diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters

Picture/Package	Diode Type	I_F	V_RRM	V_F(max)	Q_C	Package	Features	Datasheet
	SiC Schottky Diode Z-REC Rectifier	16A@147°C	650V	2.4V	40nC	TO-247-3	650 Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF

E4D10120A

Boost diodes in PFC or DC/DC stages
Free Qheeling Diodes in Inverter stages
AC/DC converters
Automotive and Traction Power Conversion
PV Inverters

Picture	Diode Type	V_RRM	V_F(max)	I_F	Package	Q_C	Datasheet
	SiC Schottky Diode E-Series Automotive	1200V	1.8V	10@156°C	TO-220-2	56nC

XM3 High Density Power Module

Product Name	Picture	Rds(on) (mOhm)	Current	Features	Description	Links
CAB450M12XM3 CAB425M12XM3 CAB400M12XM3		2.6 3.2 3.2	450A 425A 400A	Conduction Optimized Third Generation MOSFETs	Developed this power module platform, to maximize the benefits of SiC, while keeping the module and system design robust, simple and cost effective With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing Optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions Fits perfect for demanding applications such as EV chargers, UPS, and traction drives	Datasheet Flyer XM3 Overview

Portfolio Overview

SiC MOSFETs	SiC Shottky Diodes	SiC Bare Die- MOSFETs and Schottky Diodes	SiC Power Modules
900V - 1700V in production 650V - 25kV capability Up to 264A (750V 8mΩ) Broad packaging options 26 in production AECQ-101 qualified options	600V - 1700V in production Up to 50A Broad packaging options 62 in production AECQ101 qualified options	10 MOSFETs 26 Schottky diodes Bond pad options Multiple aspect ratios Metallization options	Standard footprint modules SiC optimized modules Multiple ciruit configurations

Products

Please see the new Selector Guide

MOSFETs

KEY FEATURES OF NEW C3M MOSFET TECHNOLOGY:

Easier to drive (+15V gate drive)
Flatter Rds(on) over temperature
Rugged body diode (no need for external diode)
Avalanche ruggedness
Available in new package options with separate Kelvin source pin

Package Types:

MOSFET Bare Die

R_DS(on)(mΩ)	45	80	1000	25	40	80	160	280	65	120	10	30	65	120	280	21	79
	1700V			1200V					1000V		900V					650V		Datasheets
I_D(MAX)(A)	60	30	3	90	60	36	19	10	36	23	100	75	36	23	11	56	13
TO-247-3	•		•	•	•	•	•	•					◊	◊	◊	•	•
TO-247-4	•	•							•	•	×	•				•	•
TO-263-7			•						•	•		×	•	•	•		•
Bare Die	•	•		•	•	•	•		•		•	•	•
	× = In Development					• = Commercially Released					◊ = Automotive Qualified

Part Number	Blocking Voltage (V)	R_ds(on) (mΩ)	Current Rating at 25°C (A)	Package
C3M0015065D	650	21	120	TO-247-3
C3M0015065K	650	21	120	TO-247-4
C3M0025065D	650	25	97	TO-247-3
C3M0025065K	650	25	97	TO-247-4
C3M0045065D	650	45	49	TO-247-3
C3M0045065K	650	45	49	TO-247-4
C3M0060065D	650	79	37	TO-247-3
C3M0060065K	650	79	37	TO-247-4
C3M0060065J	650	79	36	TO-263-7
C3M0120065D	650	120	22	TO-247-3
C3M0120065K	650	120	22	TO-247-4
C3M0120065J	650	120	21	TO-263-7
C3M0030090K	900	30	63	TO-247-4
C3M0065090J	900	65	35	TO-263-7
C3M0065090D	900	65	36	TO-247-3
C3M0120090J	900	120	22	TO-263-7
C3M0120090D	900	120	23	TO-247-3
C3M0280090J	900	280	11	TO-263-7
C3M0280090D	900	280	11.5	TO-247-3
C3M0065100K	1000	65	35	TO-247-4
C3M0065100J	1000	65	35	TO-263-7
C3M0120100K	1000	120	22	TO-247-4
C3M0120100J	1000	120	22	TO-263-7
C3M00161120K*	1200	16	100	TO-247-4
C3M0021120K*	1200	21	100	TO-247-4
C3M0021120D*	1200	21	100	TO-247-3
C2M0025120D	1200	25	90	TO-247-3
C3M0032120D*	1200	32	63	TO-247-3
C3M0032120K*	1200	32	63	TO-247-4
C2M0040120D	1200	40	60	TO-247-3
C3M0075120K*	1200	75	30	TO-247-4
C2M0080120D	1200	80	36	TO-247-3
C2M0160120D	1200	160	19	TO-247-3
C2M0280120D	1200	280	10	TO-247-3
C3M0016120K*	1200	16	112	TO-247-4
C3M0016120D*	1200	16	115	TO-247-3
C3M0160120D*	1200	160	17	TO-247-3
C3M0160120J*	1200	160	17	TO-263-7
C3M0350120D*	1200	350	7,6	TO-247-3
C3M0350120J*	1200	350	7,2	TO-263-7
C3M0350120J1*	1200	32	68	TO-263-7
C3M0040120D*	1200	40	66	TO-247-3
C3M0040120K*	1200	40	66	TO-247-4
C2M0045170D*	1700	45	72	TO-247-3
C2M0045170P	1700	45	72	TO-247-4 Plus
C2M0080170P	1700	80	40	TO-247-4 Plus
C2M1000170D	1700	1000	5	TO-247-3
C2M1000170J	1700	1000	5.3	TO-263-7
CPM3-0900-0010A	900	10	196	Bare Die
CPM3-0900-0030A	900	30	66	Bare Die
CPM3-0900-0065B	900	65	36	Bare Die
CPM3-1000-0065B	1000	65	36	Bare Die
CPM2-1700-0045B	1700	45	72	Bare Die
CPM2-1700-0080B	1700	80	40	Bare Die
CPM3-1200-0013A*	1200	13	149	Bare Die
CPM3-1200-0016A*	1200	16	112	Bare Die
CPM3-1200-0021A^▲	1200	21	75	Bare Die
CPM3-1200-0032A^▲	1200	32	50	Bare Die
CPM3-1200-0075A*	1200	75	30	Bare Die
* = New			^▲ = Upcoming Product

Diodes (Discrete)

Broadest portfolio of SiC Schottky diodes
More than 6 trillion field hours
Nearly 20 years of experience
Diodes feature the MPS (Merged PiN Schottky) design, which is more robust
and reliable than standard Schottky barrier diodes
Can be easily paralleled for increased design flexibility

600 & 650V

Forward Current Rating (A)	TO-220	TO-220 FullPAK	TO-220 Isolated	TO-247	TO-252 DPAK	TO-263 D2PAK	QFN	Datasheets
1	⊗				⊗			600V 650V
1.7							⊗
2	⊗	⊗			⊗
3	⊗	⊗			⊗
4	⊗	⊗			⊗
6	⊗	⊗	•		⊗	⊗
8	⊗		•		⊗	⊗
10	⊗		•		⊗	⊗
12	•*
16	•*			⊗
20	•			⊗
30				•*
50				•
• = Commercially Available		⊗ = AEC-Q101 Qualified			* = NEW!

Part Number	Blocking Voltage (V)	Current Rating (A)	Package	Datasheets
CSD01060A	600	1	TO-220-2	600V 650V
CSD01060E	600	1	TO-252-2
C3D1P7060Q	600	1.7	QFN
C3D02060A	600	2	TO-220-2
C3D02060F	600	2	TO-220-F2
C3D02060E	600	2	TO-252-2
C3D03060A	600	3	TO-220-2
C3D03060F	600	3	TO-220-F2
C3D03060E	600	3	TO-252-2
C3D04060A	600	4	TO-220-2
C3D04060F	600	4	TO-220-F2
C3D04060E	600	4	TO-252-2
C3D06060A	600	6	TO-220-2
C3D06060F	600	6	TO-220-F2
C3D06060G	600	6	TO-263-2
C3D08060A	600	8	TO-220-2
C3D08060G	600	8	TO-263-2
C3D10060A	600	10	TO-220-2
C3D10060G	600	10	TO-263-2
C3D16060D	600	16	TO-247-3
C3D20060D	600	20	TO-247-3
C3D02065E	650	2	TO-252-2
C3D03065E	650	3	TO-252-2
C3D04065A	650	4	TO-220-2
C3D04065E	650	4	TO-252-2
C3D06065I	650	6	TO-220 Iso
C3D06065A	650	6	TO-220-2
C3D06065E	650	6	TO-252-2
C3D08065I	650	8	TO-220 Iso
C3D08065A	650	8	TO-220-2
C3D08065E	650	8	TO-252-2
C3D10065I	650	10	TO-220 Iso
C3D10065A	650	10	TO-220-2
C3D10065E	650	10	TO-252-2
C3D12065A	650	12	TO-220-2
C3D16065A	650	16	TO-220-2
C3D16065D	650	16	TO-247-3
C3D16065D1*	650	16	TO-247-3
CVFD20065A	650	20	TO-220-2
C3D20065D	650	20	TO-247-3
C3D30065D	650	30	TO-247-3
C5D50065D	650	50	TO-247-3
C6D06065A*	650	6	TO-220-2
C6D08065A*	650	8	TO-220-2
C6D10065A*	650	10	TO-220-2
C6D004065E*	650	4	TO-252-2
C6D006065E*	650	6	TO-252-2
C6D008065E*	650	8	TO-252-2
C6D10065E*	650	10	TO-252-2
C6D16065D*	650	16	TO-247-3
C6D20065D*	650	20	TO-247-3
* = New

1200V

Forward Current Rating (A)	TO-220	TO-247	TO-252 DPAK
2	•		•
5	•		•
8	•		•
10	•	•	•
15	•	•
20	•	•
30		•
40		•
50

Part Number	Blocking Voltage (V)	Current Rating (A)	Package
C4D02120A	1200	2	TO-220-2
C4D02120E	1200	2	TO-252-2
C2D05120A	1200	5	TO-220-2
C4D05120A	1200	5	TO-220-2
C4D05120E	1200	5	TO-252-2
C4D08120A	1200	8	TO-220-2
C4D08120E	1200	8	TO-252-2
C4D10120A	1200	10	TO-220-2
C4D10120D	1200	10	TO-247-3
C4D10120E	1200	10	TO-252-2
C4D10120H	1200	10	TO-247-2
C4D15120A	1200	15	TO-220-2
C4D15120D	1200	15	TO-247-3
C4D15120H	1200	15	TO-247-2
C4D20120A	1200	20	TO-220-2
C4D20120D	1200	20	TO-247-3
C4D20120H	1200	20	TO-247-2
C4D30120D	1200	30	TO-247-3
C4D40120D	1200	40	TO-247-3

1700V

Forward Current Rating (A)	TO-220	TO-247	TO-252 DPAK	Datasheets
10		•
25		•
50

Part Number	Blocking Voltage (V)	Current Rating (A)	Package
C5D05170H	1700	5	TO-247-2
C5D10170H	1700	10	TO-247-2
C5D25170H	1700	25	TO-247-2

Diodes (Bare Die)

600 & 650V

Forward Current Rating (A)	Bare Die	Datasheets
1	⊗	600V 650V
1.7
2	⊗
3	⊗
4	⊗
6	⊗
8	⊗
10	⊗
12	•*
16	•*
20
30	•
50	•
• = Commercially Available	⊗ = AEC-Q101 Qualified	* = New!

Part Number	Blocking Voltage (V)	Current Rating (A)	Package	Datasheets
CPWR-0600-S001B	600	1	Bare Die	600V 650V
CPW3-0600-S002B	600	2	Bare Die
CPW3-0600-S003B	600	3	Bare Die
CPW3-0600-S004B	600	4	Bare Die
CPW2-0600-S006B	600	6	Bare Die
CPW2-0600-S008B	600	8	Bare Die
CPW2-0600-S010B	600	10	Bare Die
CPW3-0650-S004B	650	4	Bare Die
CPW2-0650-S006B	650	6	Bare Die
CPW2-0650-S008B	650	8	Bare Die
CPW2-0650-S010B	650	10	Bare Die
CPW2-0650-S012B	650	12	Bare Die
CPW2-0650-S016B	650	16	Bare Die
CPW5-0650-Z030B	650	30	Bare Die
CPW5-0650-Z050B	650	50	Bare Die

1200V

Forward Current Rating (A)	Bare Die	Datasheets
2	•
5	•
8	•
10	•
15	•
20	•
30
40
50	•

Part Number	Blocking Voltage (V)	Current Rating (A)	Package
CPW4-1200-S002B	1200	2	Bare Die
CPW4-1200-S005B	1200	5	Bare Die
CPW4-1200-S008B	1200	8	Bare Die
CPW4-1200-S010B	1200	10	Bare Die
CPW4-1200-S015B	1200	15	Bare Die
CPW4-1200-S020B	1200	20	Bare Die
CPW2-1200-S050B	1200	50	Bare Die
CPW5-1200-Z050B	1200	50	Bare Die

1700V

Forward Current Rating (A)	Bare Die	Datasheets
10	•
25	•
50	•

Part Number	Blocking Voltage (V)	Current Rating (A)	Package
CPW5-1700-S005A	1700	5	Bare Die
CPW5-1700-S010A	1700	10	Bare Die
CPW5-1700-S025A	1700	25	Bare Die
CPW5-1700-Z050B	1700	50	Bare Die

Modules

Features:

Use newest generation of Wolfspeed MOSFETs dies
Minimized package parasitics
Well-known industrial housings
Gate driver boards available
Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Easy of Paralleling

System Benefits:

Enables Compact and Lightweight Systems
High Efficiency Operation
Mitigates Over-voltage Protection
Reduced Thermal Requirements
Reduced System Cost

XM3 Overview

SiC Baseplateless Modules
Product Brief

Presentation WolfPack

Package Types:

45mm Platform

62mm Platform

Part Number	Schematic	Blocking Voltage (V)	Rds(on) (mΩ)	Current Rating (A)	Package
CAB450M12XM3*	Half-Bridge Module	1200	2.6	450	Optimized XM3
CAB425M12XM3*	Half-Bridge Module	1200	3.2	425	Optimized XM3
CAB400M12XM3*	Half-Bridge Module	1200	3.2	400	Optimized XM3
CAB400M12BM3^▲	Half-Bridge Module	1200	3.7	400	Industry-Standard 62mm
CAB300M12BM3^▲	Half-Bridge Module	1200	4.5	360	Industry-Standard 62mm
CAB011M12FM3*	Half-Bridge Module	1200	11	100	SiC Baseplateless Modules
CAB016M12FM3*	Half-Bridge Module	1200	16	82	SiC Baseplateless Modules
WAB400M12BM3^▲	Half-Bridge Module	1200	3.7	400	Industry-Standard 62mm
WAB300M12BM3^▲	Half-Bridge Module	1200	4.5	360	Industry-Standard 62mm
CAS325M12HM2	Half-Bridge Module	1200	3.7	440	High-Performance 62mm
CAS300M12BM2	Half-Bridge Module	1200	5	420	Industry-Standard 62mm
CAS120M12BM2	Half-Bridge-Module	1200	13	190	Industry-Standard 62mm
CCB021M12FM3*	Six-Pack Module	1200	21	30	SiC Baseplateless Modules
CCB032M12FM3*	Six-Pack Module	1200	32	30	SiC Baseplateless Modules
CCS050M12CM2	Six-Pack (Three Phase) Module	1200	25	85	Industry-Standard 45mm
CCS020M12CM2	Six-Pack (Three Phase) Module	1200	80	45	Industry-Standard 45mm
CAS300M17BM2	Half-Bridge-Module	1700	8	325	Industry-Standard 62mm
WAS300M12BM2	Half-Bridge-Module	1200	4.2	300	Industry-Standard 62mm
* = New			^▲ = Upcoming Product

Gate Driver Boards

Part Number	Output Channel	Isolation Voltage(V)	Output Peak Current (A)	Optimized for
CGD12HBXMP*	2	1200	10	XM3 Platform
CGD15HB62LP	2	1500	14	CAS325M12HM2
CGD12HB00D	2	1200	10	Differential Transceiver for CGD15HB62LP and CGD12HBXMP
CGD15HB62P1	2	1200	9	CAS300M12BM2, CAS120M12BM2
CGD15FB45P1	6	1200	9	CCS050M12CM2, CCS020M12CM2
CRD-001	N/A	1700	9	C2M Discrete MOSFETs (VGS=20V)
CGD15SG00D2	N/A	1700	9	C3M Discrete MOSFETs (VGS=15V)
* = New

Automotive Products

E-Series MOSFETs

Features:

AEC-Q101 Qualified and PPAP capable
Third Generation SiC MOSFET technology
Fast intrinsic diode with low reverse recovery (Q_rr)

Applications:

EV battery chargers
PV inverters
High voltage DC/DC converters

Package Types:

Part Number	V_DSmax	R_ds(on)25°	Package
E3M0065090D	900V	65mΩ	TO-247-3
E3M0120090D	900V	120mΩ	TO-247-3
E3M0280090D	900V	280mΩ	TO-247-3

E-Series Diodes

Features:

AEC-Q101 Qualified and PPAP capable
HV-H3TRB tested (85°C, 85% RH, 80% V_RRM)
Zero reverse recovery

Applications:

Boost diode in on-board chargers or PV inverters
Output rectifiers in on-board DC/DC converters
Free-wheeling diodes in vehicle traction inverters
Off-board chargers

Status	Part Number	V_RRM	I_F,Rated	Package
Available	E3D08065G	650V	8A	TO-263-2
Available	E3D30065D	650V	15 per Leg 30 per Device	TO-247-3
Available	E3D20065D	650V	10 per Leg 20 per Device	TO-247-3
Available	E4D20120A	1200V	20A	TO-220-2
Coming Soon	E4D15120A	1200V	15A	TO-220-2
Available	E4D10120A	1200V	10A	TO-220-2
Coming Soon	E4D08120A	1200V	8A	TO-220-2
Coming Soon	E4D05120A	1200V	5A	TO-220-2
Available	EPW4-1200-S020A	1200V	20A	Bare die
Coming Soon	EPW4-1200-S015A	1200V	15A	Bare die
Coming Soon	EPW4-1200-S010A	1200V	10A	Bare die
Coming Soon	EPW4-1200-S008A	1200V	8A	Bare die
Coming Soon	EPW4-1200-S005A	1200V	5A	Bare die

Applications

Fast Charger for Electric Vehicles

High Efficiency Power for Data Centers

Inverters for Solar Power and Energy Storage

Low Power Auxiliary SMPS

AC to DC Converters

DC to DC Converters

Reference Designs & Eval Kits

Features:

Electrical LTspice and PLECS models available
New online simulation tool to help you get started available.

Part Number	Description	Voltage class	Optimized for	Avail for Purchase	Links
CRD-22D12N	22kW Bi-directional High Efficiency DC/DC Converter	1200V	C3M0032120K (C3M 32mOhm)	Yes	Presentation Datasheets
KIT-CRD-8FF65P	650V SiC C3M MOSFET eval Board, 7-pin D2PAK (TO-263-7L)	450V	C3M0060065J C3M0065090J	Yes
CRD-5FF0912P	SiC MOSFET Evaluation Board, 7L-D2PAK	900V	C3M0120090J	Yes
CRD-20DD09P-2	20 kW Full Bridge Resonant LLC Converter 1000V, 65mΩ SiC MOSFETs in 4L TO-247	1000V	C3M0065100K	Yes
CRD-060DD17P-2	Auxiliary Power Supply Board for 7L-D2PAK	1700V	C2M1000170J	Yes
KIT8020- CRD-8FF1217P-1	C2M SiC MOSFET and Diode Evaluation Kit	1200V	TO-247-3 MOSFETs & Diodes	Yes
KIT8020-CRD-5FF0917P-2	C3M SiC MOSFET and Diode Evaluation Kit	1200V	TO-247-4 MOSFETs & Diodes	Yes
CRD-02AD09N	2.2 kW Totem Pole PFC Converter with C3M0065090J	900V	TO-263-7 MOSFETs	On Request
CRD-06AD09N	6.6 kW Bi-directional Onboard Charger with C3M0065100K	1000V	TO-247-4 MOSFETs	On Request
CRD-15DD17P	Wide Input Voltage Range (300 VDC - 1200 VDC) 15 W Flyback Auxiliary Power Supply Board	1700V	C2M1000170J	Yes
CRD-60DD12N	60 kW SiC DC/DC Boost Converter	1200V	C3M0075120K	On Request
CRD300DA12E-XM3*	300kW Inverter Kit for Conduction-Optimized XM3	1200V	CAB450M12XM3	Upon Request
CRD250DA12E-XM3^▲	250kW Inverter Kit for Frequency-Optimized XM3	1200V	CAB40M12XM3	Fall 2019
KIT-CRD-CIL12N-XM3*	Dynamic Performance Evaluation Board for the XM3 Module	1200V	XM3 Platform	Upon Request
KIT-CRD-3DD12P	Buck Boost Evaluation Kit	1200V	C3M0075120K	Yes
* = New			^▲ = Upcoming Product

Highlights

Product	Specifications	Features	Links
6.6 kW 1 MHz LLC DC/DC Converter	Input Voltage: 380-420 VDC Output Voltage: 400VDC Output Power: 6.6 kW Frequency: 625kHz at 400VDC input, 1.5 MHz at startup Peak Efficiency > 98% Power Density: 7.8 kW/L	Low Power Loss SiC MOSFET - C3M0060065D and C6D10065A ZVS Enables High Switching Frequeny Integrated Magnetics Rsults in Smaller Size and Lighter Weight Peak Sytsem Efficiency > 98%	Presentations
6.6 kW Bi-Directional Ev On-Board Charger	AC Input / Output Voltage: 90 - 265 Vac Rated Power: 6.6 kW Max; power derating below 215 V Battery Voltage Range: 250 - 450V (I_out limited to 18A) PCBA Dimensions: 220mm X 1800mm X 50mm (3.3kW/L or 3.3W/cm³) Peak Efficiency: >96.5 % both charging and discharging Switching Frequency 150 kHz - 300 kHz DC/DC, 67kHz AC/DC Bas PLate Temperature: 65°C	Variable DC bus (380 - 425V) to allow a narrower gain range for DC/DC OBC stops working when battery voltage is lower than 320 V in discharging mode	Presentations
2kW Totem Pole PFC Based on SiC MOSFETs	Input Voltage: 180 - 264 VDC Output Voltage: 400 ± 2% VDC Switching Frequency: 85 kHz Continuous Output Power: 2 kW Peak Efficiency > 98.5 %	Simple low part count topology Peak efficiency >98.5 % THD < 5 %at full load Rg_on: 4.7 ohm Rg_off: 10 ohm Frequency: 85 KHz Input 230V AC	Presentations
CRD300DA12E-XM3	DC Bus Voltage, Maximum: 900VDC DC Bus Voltage, Recommended: 800VDC Maximum Drain-Source Volatge: 1200 VDSmax Switching Frequency: 20 to 80kHz Output Power: 300kW	Optimized for Cree's All-SiC High-Performance, Low Inductance XM3 Power Module Complete Stackup, including: Modules, Cooling, Bussing, Gate Drivers, Voltage / Current Sensors, and Controller High Frequency, Ultra-Fast Switching Operation with Ultra-Low Loss, Low Parasitic Bussing	Datasheet User-Guide

Forward Current Rating (A)	TO-220	TO-247	TO-252 DPAK
2	•		•
5	•		•
8	•		•
10	•	•	•
15	•	•
20	•	•
30		•
40		•
50

Forward Current Rating (A)	TO-220	TO-247	TO-252 DPAK
2	•		•
5	•		•
8	•		•
10	•	•	•
15	•	•
20	•	•
30		•
40		•
50

About Wolfspeed

Why Wolfspeed?

Why SiC?

Silicon Carbide vs. Silicon:

Why Wolfspeed SiC?

Upcoming Products

New Products

WolfPACK™ modules

1200V MOSFETs

New E-Series Automotive Qualified Diodes

CRD-22DD12N

650V MOSFETs

KIT-CRD-8FF65P

62mm (BM2 & BM3) SiC Half-Bridge Power Modules

6TH Generation (C6D) 650V SiC Schottky Diodes

C3M0160120D

C3M0160120J

C3M0350120D

C3M0350120J

C3D16065D1

E4D10120A

XM3 High Density Power Module

Portfolio Overview

Products

MOSFETs

Diodes (Discrete)

600 & 650V

1200V

1700V

Diodes (Bare Die)

600 & 650V

1200V

1700V

Modules

Gate Driver Boards

Automotive Products

E-Series MOSFETs

E-Series Diodes

Applications

Fast Charger for Electric Vehicles

High Efficiency Power for Data Centers

Inverters for Solar Power and Energy Storage

Low Power Auxiliary SMPS

AC to DC Converters

DC to DC Converters

Reference Designs & Eval Kits

Highlights

6^TH Generation (C6D) 650V SiC Schottky Diodes

Forward Current Rating (A)	TO-220	TO-247	TO-252 DPAK
2	•		•
5	•		•
8	•		•
10	•	•	•
15	•	•
20	•	•
30		•
40		•
50